Mitsubishi Electric And Nexperia To Partner In Joint SiC Power Semiconductors Development
Mitsubishi Electric (TOKYO: 6503) initiates a strategic collaboration with Nexperia B.V. to co-innovate silicon carbide (SiC) power semiconductors. Leveraging its wide-bandgap semiconductor expertise, Mitsubishi Electric will provide SiC MOSFET chips to Nexperia, instrumental in crafting SiC discrete devices.
The global electric vehicle market's expansion propels the soaring demand for SiC power semiconductors, prized for their reduced energy loss, heightened operational temperatures, and swift switching compared to traditional silicon counterparts. These high-efficiency SiC semiconductors are anticipated to play a significant role in global decarbonization and the shift towards eco-friendly technologies.
Mitsubishi Electric holds prominent positions across various sectors, including high-speed trains, high-voltage industrial applications, and household appliances. Notably, they introduced the pioneering SiC power modules—the world's first for air conditioners in 2010 and exclusively for Shinkansen bullet trains in 2015. Renowned for their exceptional performance and reliability, Mitsubishi Electric's SiC power modules exemplify their unmatched expertise in development and production, poised to further propel SiC semiconductor innovation for a sustainable, eco-conscious future.
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